| Continuous analyticⅠ-Ⅴmodel for GS DG MOSFETs including hot-carrier degradation effects |
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| 作者姓名： | Toufik Bentrcia Faycal Djeffal Abdel Hamid Benhaya |
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| 作者单位： | Department of Physics University of Batna,Batna 05000,Algeria;LEA Department of Electronics,University of Batna,Batna 05000,Algeria |
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| 摘 要： | 正We have studied the influence of hot-carrier degradation effects on the drain current of a gate-stack double-gate(GS DG) MOSFET device.Our analysis is carried out by using an accurate continuous current-voltage (Ⅰ-Ⅴ) model,derived based on both Poisson's and continuity equations without the need of charge-sheet approximation. The developed model offers the possibility to describe the entire range of different regions(subthreshold, linear and saturation) through a unique continuous expression.Therefore,the proposed approach can bring considerable enhancement at the level of multi-gate compact modeling including hot-carrier degradation effects.
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| 关 键 词： | GS DG MOSFET hot-carriers degradation effects compact modeling piece-wise models |
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