| AlGaN/GaN HEMTs with 0.2μm V-gate recesses for X-band application |
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| 引用本文： | 王冲,何云龙,郑雪峰,郝跃,马晓华,张进城.AlGaN/GaN HEMTs with 0.2μm V-gate recesses for X-band application[J].半导体学报,2012,33(3):24-27. |
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| 作者姓名： | 王冲 何云龙 郑雪峰 郝跃 马晓华 张进城 |
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| 作者单位： | Key Laboratory of Wide Band gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University |
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| 基金项目： | Project supported by the National Key Science & Technology Special Project,China(No.2008ZX01002-002);the Major Program and State Key Program of National Natural Science Foundation of China(Nos.60890191,60736033);the Fundamental Research Funds for the Central Universities,China(Nos.K50510250003,K50510250006) |
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| 摘 要： | 正AlGaN/GaN HEMTs with 0.2μm V-gate recesses were developed.The 0.2μm recess lengths were shrunk from the 0.6μm designed gate footprint length after isotropic SiN deposition and anisotropic recessed gate dry etching.The AlGaN/GaN HEMTs with 0.2μm V-gate recesses on sapphire substrates exhibited a current gain cutoff frequency f_t of 35 GHz and a maximum frequency of oscillation f_(max) of 60 GHz.At 10 GHz frequency and 20 V drain bias,the V-gate recess devices exhibited an output power density of 4.44 W/mm with the associated power added efficiency as high as 49%.
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| 关 键 词： | high electron mobility transistors AlGaN/GaN V-gate recess |
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