A PNPN tunnel field-effect transistor with high-k gate and Iow-k fringe dielectrics |
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Authors: | Cui Ning Liang Renrong Wang Jing Zhou Wei and Xu Jun |
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Affiliation: | Tsinghua National Laboratory for Information Science and Technology,Institute of Microelectronics,Tsinghua University, Beijing 100084,China |
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Abstract: | A PNPN tunnel field effect transistor(TFET) with a high-k gate dielectric and a low-k fringe dielectric is introduced.The effects of the gate and fringe electric fields on the TFET’s performance were investigated through two-dimensional simulations.The results showed that a high gate dielectric constant is preferable for enhancing the gate control over the channel,while a low fringe dielectric constant is useful to increase the band-to-band tunneling probability.The TFET device with the proposed structure has good switching characteristics,enhanced on-state current,and high process tolerance.It is suitable for low-power applications and could become a potential substitute in next-generation complementary metal-oxide-semiconductor technology. |
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Keywords: | TFET subthreshold swing high-k dielectric low-k dielectric fringe electric field |
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