High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with fmax=256 GHz and BVCEO= 8.3 V |
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| Authors: | Cheng Wei Zhao Yan Gao Hanchao Chen Chen Yang Naibin |
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| Affiliation: | Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute, Nanjing 210016,China |
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| Abstract: | An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology.All processes are on 3-inch wafers.The DHBT with an emitter area of 1 x 15μm2 exhibits a current cutoff frequency ft = 170 GHz and a maximum oscillation frequency fmax = 256 GHz.The breakdown voltage is 8.3 V,which is to our knowledge the highest BVCEO ever reported for InGaAs/InP DHBTs in China with comparable high frequency performances.The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage-controlled oscillator and mixer applications at W band or even higher frequencies. |
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| Keywords: | InP double heterojunction bipolar transistor planarization |
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