A different approach for determining the responsivity of n~+p detectors using scanning electron microscopy

This paper explores an alternative to the standard method of studying the responsivities(the input-output gain) and other behaviours of detectors at low electron energy.The research does not aim to compare the results of differently doped n~+p detectors;its purpose is to provide an alternative characterization method(using scanning electron microscopy) to those used in previous studies on the responsivity of n~+p doped detectors as a function of the electron radiation energy and other interface parameters.