A wideband LNA employing gate-inductive-peaking and noise-canceling techniques in 0.18μm CMOS |
| |
作者姓名: | 包宽 樊祥宁 李伟 章丽 王志功 |
| |
作者单位: | Institute of RF- & OE-ICs Southeast University,Nanjing 210096,China |
| |
基金项目: | Project Supported by the National Science and Technology Major Project of China(No.2009ZX03002-004) |
| |
摘 要: | 正This paper presents a wideband low noise amplifier(LNA) for multi-standard radio applications.The low noise characteristic is achieved by the noise-canceling technique while the bandwidth is enhanced by gateinductive -peaking technique.High-frequency noise performance is consequently improved by the flattened gain over the entire operating frequency band.Fabricated in 0.18μm CMOS process,the LNA achieves 2.5 GHz of -3 dB bandwidth and 16 dB of gain.The gain variation is within±0.8 dB from 300 MHz to 2.2 GHz.The measured noise figure(NF) and average HP3 are 3.4 dB and -2 dBm,respectively.The proposed LNA occupies 0.39 mm2 core chip area.Operating at 1.8 V,the LNA drains a current of 11.7 mA.
|
关 键 词: | low noise amplifier wideband LNA gate-inductive-peaking noise-canceling wideband input matching |
本文献已被 CNKI 万方数据 等数据库收录! |