| S-band low noise amplifier using 1μm InGaAs/InAlAs/InP pHEMT |
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| 作者姓名： | Z.Hamaizia N.Sengouga M.C.E.Yagoub M.Missous |
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| 作者单位： | Laboratory of Materials Semiconductors and Metallic,University of Med Khider;RF and Microwave Research Group,School of Electrical Engineering and Computer Science,University of Ottawa,Ottawa ON,KIN 6N5 Canada;Microelectronic & Nanostructure Group,School of Electric and Electronic Engineering,University of Manchester,UK |
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| 摘 要： | 正This paper discusses the design of a wideband low noise amplifier(LNA) in which specific architecture decisions were made in consideration of system-on-chip implementation for radio-astronomy applications.The LNA design is based on a novel ultra-low noise InGaAs/InAlAs/InP pHEMT.Linear and non-linear modelling of this pHEMT has been used to design an LNA operating from 2 to 4 GHz.A common-drain in cascade with a common source inductive degeneration,broadband LNA topology is proposed for wideband applications.The proposed configuration achieved a maximum gain of 27 dB and a noise figure of 0.3 dB with a good input and output return loss(S_(11)—10 dB,S_(22)—11 dB).This LNA exhibits an input 1-dB compression point of-18 dBm,a third order input intercept point of 0 dBm and consumes 85 mW of power from a 1.8 V supply.
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| 关 键 词： | HEMT InGaAs InP SKADS telescope LNA |
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