Influence of sputtering pressure on optical constants of a-GaAs1-xNx thin films* |
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| Authors: | Jia Baoshan Wang Yunhua Zhou Lu Bai Duanyuan Qiao Zhongliang Gao Xin and Bo Baoxue |
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| Affiliation: | State Key Laboratory on High Power Semiconductor Lasers,Changchun University of Science and Technology, Changchun 130022,China |
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| Abstract: | Amorphous GaAs1-xNx(a-GaAs1-xNx) thin films have been deposited at room temperature by a reactive magnetron sputtering technique on glass substrates with different sputtering pressures.The thickness,nitrogen content,carrier concentration and transmittance of the as-deposited films were determined experimentally.The influence of sputtering pressure on the optical band gap,refractive index and dispersion parameters（Eo,Ed） has been investigated.An analysis of the absorption coefficient revealed a direct optical transition characterizing the asdeposited films.The refractive index dispersions of the as-deposited a-GaAs1-xNx films fitted well to the Cauchy dispersion relation and the Wemple model. |
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| Keywords: | a-GaAs1xNx thin films sputtering deposition optical constants |
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