| MOS Capacitance-Voltage Characteristics:Ⅳ.Trapping Capacitance from 3-Charge-State Impurities |
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| 引用本文： | 揭斌斌,薩支唐.MOS Capacitance-Voltage Characteristics:Ⅳ.Trapping Capacitance from 3-Charge-State Impurities[J].半导体学报,2012,33(1):1-19. |
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| 作者姓名： | 揭斌斌 薩支唐 |
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| 作者单位： | Department of Physics Xiamen University,Xiamen 361005,China;CTSAH Associates,Gainesville,Florida 32605,USA |
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| 基金项目： | Supported by the Xiamen University,China,and the CISAH Associates(CTSA),founded by the late Linda Su-Nan Chang Sah |
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| 摘 要： | 正Metal-Oxide-Semiconductor Capacitance-Voltage(MOSCV) characteristics containing giant carrier trapping capacitances from 3-charge-state or 2-energy-level impurities are presented for not-doped,n-doped,pdoped and compensated silicon containing the double-donor sulfur and iron,the double-acceptor zinc,and the amphoteric or one-donor and one-acceptor gold and silver impurities.These impurities provide giant trapping capacitances at trapping energies from 200 to 800 meV(50 to 200 THz and 6 to 1.5μm),which suggest potential sub-millimeter,far-infrared and spin electronics applications.
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| 关 键 词： | multiple charge states trapping capacitance dopant impurity |
MOS Capacitance-Voltage Characteristics:Ⅳ.Trapping Capacitance from 3-Charge-State Impurities |
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| JieBinbin
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Sah Chihtang.MOS Capacitance-Voltage Characteristics:Ⅳ.Trapping Capacitance from 3-Charge-State Impurities[J].Chinese Journal of Semiconductors,2012,33(1):1-19. |
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| Authors: | JieBinbin Sah Chihtang |
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| Affiliation: | Department of Physics, Xiamen University, Xiamen 361005, China;CTSAH Associates, Gainesville, Florida 32605, USA |
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| Abstract: | Metal-Oxide-Semiconductor Capacitance-Voltage(MOSCV) characteristics containing giant carrier trapping capacitances from 3-charge-state or 2-energy-level impurities are presented for not-doped,n-doped,pdoped and compensated silicon containing the double-donor sulfur and iron,the double-acceptor zinc,and the amphoteric or one-donor and one-acceptor gold and silver impurities.These impurities provide giant trapping capacitances at trapping energies from 200 to 800 meV(50 to 200 THz and 6 to 1.5μm),which suggest potential sub-millimeter,far-infrared and spin electronics applications. |
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| Keywords: | multiple charge states trapping capacitance dopant impurity |
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