射频功率对Cu/Ag导电薄膜结构和性能的影响

采用射频磁控溅射工艺以Cu／Ag合金为靶材在高阻半导体Cd1-xZnxTe上制备导电薄膜。系统地研究了溅射功率对沉积速率、薄膜电阻率、组织形貌及接触性能的影响。结果表明，沉积速率随溅射功率的增加呈线性增加，薄膜电阻率随功率增大而增大。电流-电压关系（I—U）测试表明在高阻Cd1-xZnxTe上溅射Cu／Ag薄膜后不经热处理已具有良好的欧姆接触性，溅射功率为100W时的接触性能好于功率40W时的接触性能。

Effect of RF Power on Structure and Properties of Cu/Ag Films

Cu/Ag alloy film has been deposited on semiconductor of high resistivity Cd_(1-x)Zn_xTe by RF(radio frequency) magnetron sputtering,with Cu/Ag alloy as the target and high purity argon(99.999%) as the sputtering gas.Influences of the sputtering power on deposition rate,film resistivity,film structure,and contact performance of the film prepared on Cd_(1-x)Zn_xTe substrate were investigated.It is shown that the deposition rate of Cu/Ag film increased almost linearly with increasing sputtering power.At the same time,with increasing sputtering power,the resistivity of film increased.Current-voltage test shows that the ohmic contact property between sputtered Cu/Ag film and Cd_(1-x)Zn_xTe was good even without heat treatment.The ohmic contact property under sputtering power of 100 W was better than that of 40 W.