| Si衬底上ZnO外延膜结构性质的比较 |
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| 引用本文： | 王坤,姚淑德,丁志博,朱俊杰,傅竹西. Si衬底上ZnO外延膜结构性质的比较[J]. 半导体学报, 2006, 27(8): 1386-1390 |
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| 作者姓名： | 王坤 姚淑德 丁志博 朱俊杰 傅竹西 |
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| 作者单位： | 北京大学物理学院，北京 100871;北京大学物理学院，北京 100872;北京大学物理学院，北京 100873;中国科学技术大学物理系，合肥 230026;中国科学技术大学物理系，合肥 230027 |
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| 基金项目： | 国家自然科学基金 , 中国-比利时合作项目 |
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| 摘 要： | 采用连通式双反应室高温MOCVD系统在Si衬底上外延ZnO薄膜,通过卢瑟福背散射/沟道(RBS/C)及高分辨X射线衍射(HR-XRD)技术对不同衬底条件的ZnO外延膜进行了组分及结构分析,结果表明在采用SiC缓冲层后,Si(111)衬底上ZnO(0002)面衍射峰半高宽明显减小,缺陷密度降低,单晶质量显著变好,c轴方向应变由0.49%变为-0.16%,即由拉应变变为压应变且应变值变小,说明SiC缓冲层可以有效地减小ZnO与Si衬底晶格失配带来的应变,改善外延膜质量,实现Si衬底上单晶ZnO的生长.
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| 关 键 词： | ZnO/SiC/Si 卢瑟福背散射/沟道 高分辨X射线衍射 结构性质 外延膜 结构性质 比较 Substrates Epilayer Characteristics 生长 改善 晶格失配 应变值 压应变 拉应变 方向 质量 单晶 缺陷密度 宽明 衍射峰 缓冲层 结果 |
| 文章编号： | 0253-4177(2006)08-1386-05 |
| 收稿时间： | 2005-12-29 |
| 修稿时间： | 2006-03-01 |
Structural Characteristics of ZnO Epilayer Grown on Si Substrates |
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| Wang Kun,Yao Shude,Ding Zhibo,Zhu Junjie and Fu Zhuxi. Structural Characteristics of ZnO Epilayer Grown on Si Substrates[J]. Chinese Journal of Semiconductors, 2006, 27(8): 1386-1390 |
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| Authors: | Wang Kun Yao Shude Ding Zhibo Zhu Junjie Fu Zhuxi |
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| Affiliation: | School of Physics,Peking University,Beijing 100871,China;School of Physics,Peking University,Beijing 100872,China;School of Physics,Peking University,Beijing 100873,China;Department of Physics,University of Science and Technology of China,Hefei 230026,China;Department of Physics,University of Science and Technology of China,Hefei 230027,China |
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| Abstract: | High-quality ZnO thin films are deposited on different Si substrates by double-connected low pressure metal-organic chemical vapor deposition (LP-MOCVD).Their composition and structural characteristics are characterized using Rutherford backscattering (RBS)/channeling and X-ray diffraction (XRD) technology.The sample with a SiC buffer layer on the Si(111) substrate has a smaller full-width at half maximum of XRD (0002) reflection,and the elastic strain of the c axis with a smaller value is changed from positive to negative.These results show that the SiC buffer layer can reduce the strain from the lattice mismatch between ZnO and the Si substrate and improve the quality of single-crystal ZnO films. |
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| Keywords: | ZnO/SiC/Si Rutherford backscattering/channeling X-ray diffraction structure properties |
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