Bistability of hydrogen donors in proton-implanted GeSi alloy |
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| Authors: | Yu. M. Pokotilo A. N. Petukh V. V. Litvinov V. P. Markevich A. R. Peaker N. V. Abrosimov |
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| Affiliation: | (1) Ningbo Institute of Technology, Zhejiang University, Ningbo, Zhejiang, 315100, People’s Republic of China;(2) Department of Chemical and Materials Engineering, University of Alberta, Edmonton, AB, Canada, T6G 2G6 |
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| Abstract: | Shallow hydrogen donors (H-donors) were formed in a Ge1 − x Si x (x = 0.012) alloy by the implantation of low-energy protons followed by heat treatment at 275°C The electrical properties of these donors have been studied using the method of capacitance-voltage characteristics. It is established that a certain fraction of the H-donors exhibit bistability, whereby their concentration changes reversibly when the sample temperature is cycled within 100–200°C. The properties of reversible H-donors in germanium are analogous to those of the bistable H-donors in silicon. |
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