| 喷雾热分解法制备ZnO系低压压敏薄膜 |
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| 引用本文： | 贾锐,武光明,宋世庚,陶明德. 喷雾热分解法制备ZnO系低压压敏薄膜[J]. 硅酸盐学报, 1999, 27(4): 505-507 |
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| 作者姓名： | 贾锐 武光明 宋世庚 陶明德 |
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| 作者单位： | 中国科学院新疆物理研究所 |
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| 摘 要： | 首次利用喷雾热分解法成功地制备出低压ＺｎＯ压敏薄膜。沉积温度３５０℃，沉积时间２ｈ；退火温度６５０℃，退火时间１ｈ。Ｘ射线分析表明薄膜经退火后已良好晶化。其非线性系数α为８．０９；压敏电电压Ｖ１ｍＡ为１３．１５Ｖ。实验表明通过制备ＺｎＯ薄膜可得到较低的压敏电压。
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| 关 键 词： | 氧化锌 低压压敏薄膜 喷雾热分解 |
ZnO_BASED THIN FILM VARISTOR PREPARED BY SPRAY PYROLYSIS |
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| Jia Rui,Wu Guangmin,Song Shigeng,Tao Mingde. ZnO_BASED THIN FILM VARISTOR PREPARED BY SPRAY PYROLYSIS[J]. Journal of The Chinese Ceramic Society, 1999, 27(4): 505-507 |
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| Authors: | Jia Rui Wu Guangmin Song Shigeng Tao Mingde |
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| Abstract: | ZnO low voltage thin film varistor prepared by means of spray pyrolysis for the first time is reported in this paper. The thin film was deposited at 350 for 2 h and annealed at 650 . X-ray shows at the annealed thin films main phase is ZnO phase. The thin films nonlinear coefficient reaches 8.09 and its breakdown voltage(V1mA) is 13.15 V. Experimental result indicates that low breakdown voltage(V1mA)can be obtained by preparing ZnO thin film. |
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| Keywords: | zinc oxide low voltage thin film varistor spray pyrolysis |
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