Memory characteristics of Au/PZT/BIT/p-Si ferroelectric diode |
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Authors: | WANG Hua YU Jun Dong Xiaomin Zhou Wenli Wang Yunbo ZHENG Yuankai ZHAO Jianhong |
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Affiliation: | 1. Department of Electronic Science Technology, Huazhong University of Science Technology,;Department of Electron Information, Guilin Institute of Electronic Technology, 2. Department of Electronic Science Technology, Huazhong University of Science Technology, 3. Department of Electron Information, Guilin Institute of Electronic Technology, |
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Abstract: | A ferroelectric memory diode consisting of Au/PZT/BIT/p-Si multilayer configuration has been fabricated by pulsed laser deposition
(PLD) technique. The ferroelectric properties and the memory characteristics are investigated. The P-E curve of the PZT/BIT/p-Si
films system had an asymmetry saturated hysteresis loop withP
t=15 μC/cm2 andE
c=48 kV/cm, and the decay in remanent polarization was only 10% after 109 switching cycles, meanwhile the increase in coercive field was 12%. The C-V hysteresis loop and the I-V curve showed a memory
effect derived from the ferroelectric polarization of PZT/BIT films, and the current density was 6.7×10−8 A/cm2 at a voltage of +4V. Our diode had nonvolatile and nondestructive memory readout operation. There was a read current disparity
of 0.05 μA for logic “1” and logic “0” at a read voltage of +2V, and the stored logical value (“1” or “0”) could be read out
in 30 min. |
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Keywords: | ferroelctric films memory diode Pb(Zr0 52Ti0 48)O3 Bi4Ti3O12 |
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