Narrow spectral linewidth characteristics of monolithic integrated-passive-cavity InGaAsP/InP semiconductor lasers |
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| Authors: | Fujita T Ohya J Matsuda K Ishino M Sato H Serizawa H |
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| Affiliation: | Matsushita Electric Industrial Co. Ltd., Central Research Laboratory, Moriguchi, Japan; |
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| Abstract: | The spectral linewidth of 1.3 ?m monolithic integrated-passive-cavity (IPC) semiconductor laser is measured by a delayed self-heterodyne technique. It is found that the line-width is narrowed when longitudinal submode is suppressed. The narrowest linewidth obtained so far is 900 kHz at 6 mW output power. |
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