Ultrafast current switching using the tunneling-assisted impact ionization front in a silicon semiconductor closing switch |
| |
Authors: | S K Lyubutin S N Rukin B G Slovikovsky S N Tsyranov |
| |
Affiliation: | (1) Institute of Electrophysics, Ural Division, Russian Academy of Sciences, Yekaterinburg, Russia |
| |
Abstract: | Ultrafast current switching in semiconductors, based on the mechanism of tunneling-assisted impact ionization front, has been
experimentally implemented and theoretically studied. A voltage pulse with an amplitude of 220 kV and a front duration of
1 ns was applied to a semiconductor device containing 20 serially connected silicon diode structures. After switching, 150-to
160-kV pulses with a power of 500 MW, a pulse duration of 1.4 ns, and a front duration of 200–250 ps were obtained in a 50-Ω
transmission line. The maximum current and voltage buildup rates amounted to 10 kA/ns and 500 kV/ns, respectively, at a switched
current density of 13 kA/cm2. The results of numerical simulation are presented, which show that the current switching is initiated at a threshold field
strength of about 1 MV/cm in the vicinity of the p-n junction, where the tunneling-assisted impact ionization begins. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|