Fabrication of thin films by sputtering deposition using (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 ceramic as target

Dielectric ceramic thin films were fabricated on SiO₂ (110) substrates by the radio frequency (RF) magnetron sputtering method using (Ba_0.3Sr_0.7)(Zn_1/3Nb_2/3)O₃ microwave dielectric ceramic as target. The microstructure, components, and morphology of the thin films were investigated thoroughly. The results reveal that the experimental conditions can affect the growth of the thin films significantly. The main phases of the thin films are Ba_0.5Sr_0.5Nb₂O₆ and Ba_0.27Sr_0.75Nb₂O_5.78, which are of different composition from that of the ceramic target due to Zn loss. The thin films are polycrystalline with high-quality crystalline and are made up of dense rod-like structures. The growth mechanism of the thin films is discussed in particular.