A new growth method for CdTe: A breakthrough toward large areas |
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Authors: | B Pelliciari F Dierre D Brellier L Verger F Glasser B Schaub |
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Affiliation: | (1) LETI/DOPT/SLIR, CEA-Grenoble, 38054 Grenoble, Cedex 9, France;(2) LETI/DTBS/STD, CEA, Grenoble;(3) Consultant Technomic SA, CH 1294 Geneva, Switzerland |
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Abstract: | CdTe and CdZnTe are well-investigated II-VI semiconductors, mainly used as substrates for the HgCdTe-IR detection and as detectors
for x-ray and γ-ray detection. For both applications, the demand is toward larger and larger dimensions to make larger infrared
(IR) and x-ray and γ-ray arrays. This paper presents a new method to grow large dimension CdTe (or CdZnTe), mainly devoted
to x-ray and γ-ray detection. This method is based on solvent evaporation from Te-rich solution made of cadmium and tellurium
(optionally zinc); it operates in an open tube, and growth proceeds in a crucible maintained at a constant temperature. At
the end of growth, a disc of CdTe (or CdZnTe) is obtained, the thickness of which is in the range 1–10 mm. The 65-mm-diameter
discs appear as polycrystals with large grains. The electrical properties strongly depend on the presence of voluntarily introduced
dopants to obtain high-resistivity material. Two different impurities are commonly used to obtain resistivity in the 1010 Ωcm range: aluminum and chlorine. Characterization of both doped materials and results of detectors under x-ray and γ-ray
illumination will be given; spectrometric grade performance has been obtained and will be presented. The originally 65-mm-diameter
crucible can be scaled up to 300 mm in diameter; this will be discussed in the paper. |
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Keywords: | CdTe CdZnTe growth method |
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