Low dielectric constant materials for advanced interconnects

Materials with low dielectric constants are being developed to replace silicon dioxide as interlevel dielectrics. This paper discusses material issues and the characterization of low-k materials for integration into advanced interconnects. Measurement techniques for the characterization of low-k films are discussed, and the results for several classes of low-k materials are presented. The properties of these materials are discussed in relation to structure-property relationships. For more information, contact P. Ho, University of Texas, Institute for Materials Science, Austin, Texas 78712; (512) 471-8961; fax (512) 471-8969; e-mail paulho@mail.utexas.edu.