Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD) |
| |
| Authors: | G X Liu F K Shan J J Park W J Lee G H Lee I S Kim B C Shin S G Yoon |
| |
| Affiliation: | (1) Electronic Ceramics Center, DongEui University, Busan, 614-714, Korea;(2) Department of Materials Engineering, Chungnam National University, Daeduk Science Town, Daejeon, 305-764, Korea |
| |
| Abstract: | Ga2O3 and Ga2O3-TiO2 (GTO) nano-mixed thin films were prepared by plasma enhanced atomic layer deposition with an alternating supply of reactant
sources, (CH3)2GaNH2]3, Ti(N(CH3)2)4 and oxygen plasma. The uniform and smooth Ga2O3 and GTO thin films were successfully deposited. Excellent step coverage of these films was obtained by chemisorbed chemical
reactions with oxygen plasma on the surface. The dielectric constant of GTO thin film definitely increased compared to Ga2O3 film, and the leakage currents of GTO films were comparable to Ga2O3 films. The leakage current density of a 40-nm-GTO film annealed at 600∘C was approximately 1×10−7 A/cm2 up to about 600 kV/cm. |
| |
| Keywords: | Ga2O3-TiO2 PEALD Dielectric constant Leakage current |
| 本文献已被 SpringerLink 等数据库收录！ |
|
