| Sn掺杂Ge-Sb-Te相变薄膜的晶化特性 |
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| 引用本文： | 顾四朋,侯立松,赵启涛. Sn掺杂Ge-Sb-Te相变薄膜的晶化特性[J]. 材料研究学报, 2004, 18(2): 181-186 |
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| 作者姓名： | 顾四朋 侯立松 赵启涛 |
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| 作者单位： | 中国科学院上海光学精密机械研究所 |
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| 摘 要： | 用磁控溅射法制备了掺杂Sn的Ge2Sb2Te5相变材料薄膜,研究了Sn含量对结晶性能的影响.薄膜的X射线衍射(XRD)表明,热处理使薄膜发生了从非晶态到晶态的相变,并出现Sn-Te相.通过示差扫描量热(DSC)实验测出在不同加热速率下非晶态薄膜粉末的结晶峰温度,计算了材料的结晶活化能.根据结晶动力学分析和结晶活化能数据,掺杂Sn后的Ge-Sb-Te具有更高的结晶速率,用于光存储时将具有更高的擦除速度.
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| 关 键 词： | 无机非金属材料 Ge2Sb2Te5 Sn掺杂 热致相变 结晶活化能 |
| 文章编号： | 1005-3093(2004)02-0181-06 |
| 收稿时间： | 2004-05-21 |
| 修稿时间： | 2003-04-15 |
Crystallization properties of Sn--doped Ge--Sb--Te phase--change films |
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| GU Sipeng,HOU Lisong,ZHAO Qitao. Crystallization properties of Sn--doped Ge--Sb--Te phase--change films[J]. Chinese Journal of Materials Research, 2004, 18(2): 181-186 |
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| Authors: | GU Sipeng HOU Lisong ZHAO Qitao |
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| Affiliation: | GU Sipeng,HOU Lisong,ZHAO Qitao Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800 |
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| Abstract: | Sn-doped Ge_2Sb_2Te_5 thin films were prepared by RF-sputtering.The effect of Sn-content on their crystallization properties was studied by XRD and DSC.The XRD spectra of the films inthe as-deposited and heat-treated states showed that the films changed from amorphous to crystallinestates due to heat-treatment and Sn-Te phase appeared.Using DSC data of the amorphous filmmaterials,the activation energies were calculated by measuring the peak crystallization temperaturesat different heating rates.It was found that the Ge-Sb-Te-Sn samples have higher activation energyof crystallization than that of the Ge_2Sb_2Te_5 sample.It is concluded from these results that Sn-dopingcan increase the crystallization rate of the Ge_2Sb_2Te_5 phase-change material,and thereby increase theerasing speed of the material for rewritable optical storage. |
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| Keywords: | inorganic non-metallic materials Ge_2Sb_2Te_5 Sn-doping thermal phase-change activation energy of crystallization |
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