High-quality schottky and ohmic contacts in planar 4H-SiC metal semiconductor field-effect transistors and device performance |
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Authors: | Hoonjoo Na Hyeongjoon Kim Kazuhiro Adachi Norihiko Kiritani Satoshi Tanimoto Hideyo Okushi Kazuo Arai |
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Affiliation: | (1) Power Electronics Research Center, AIST Tsukuba Central 2, 305-8568 Ibaraki, Japan;(2) Advanced Power Device Laboratory, R&D Association for Future Electron Devices, 305-8568 Ibaraki, Japan;(3) Ultra-Low-Loss Power Device Technology Research Body, 305-8568 Ibaraki, Japan;(4) School of Materials Science and Engineering, Seoul National University, 151-742 Seoul, Korea |
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Abstract: | We have fabricated planar 4H-SiC, metal-semiconductor field-effect transistors (MESFETs) with high-quality metal/SiC contacts.
To eliminate potential damage to the gate region caused by etching and simplify the device fabrication process, gate Schottky
contacts were formed without any recess gate etching, and an ideality factor of 1.03 was obtained for these gate contacts.
The interface state density between the contact metal and SiC was 5.7×1012 cm−2eV−1, which was found from the relationship between the barrier height and the metal work function. These results indicate that
the interface was well controlled. Thus, a transconductance of 30 mS/mm was achieved with a 3-μm gate length as the performance
figure of these MESFETs with high-quality metal/SiC contacts. Also, a low ohmic contact resistance of 1.2×10−6 Θcm2 was obtained for the source and drain ohmic contacts by using ion implantation. |
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Keywords: | SiC MESFET ohmic contact Schottky contact ion implantation |
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