| Fe^＋辐照引起Si—SiO2结构变化的研究 |
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| 引用本文： | 靳涛,铁木尔.Fe^＋辐照引起Si—SiO2结构变化的研究[J].核技术,1992,15(7):417-421. |
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| 作者姓名： | 靳涛 铁木尔 |
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| 作者单位： | 中国科学院新疆物理研究所，中国科学院新疆物理研究所，中国科学院新疆物理研究所，哈萨克科学院核物理研究所 乌鲁木齐 830011，乌鲁木齐 830011，乌鲁木齐 830011，阿拉木图 480082 |
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| 摘 要： |
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| 关 键 词： | Si－SiO2系统 铁离子 辐照 结构 硅 |
The structure modification of Si-SiO_2 irradiated by Fe~+ ion |
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| Jin Tao Ma Zhongquan Guo Qi.The structure modification of Si-SiO_2 irradiated by Fe~+ ion[J].Nuclear Techniques,1992,15(7):417-421. |
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| Authors: | Jin Tao Ma Zhongquan Guo Qi |
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| Abstract: | In this paper the effect of the iron ion implantation on the oxide surface and SiO2-Si interface of MOS structure was studied by X-ray photo-electron spectroscopy (XPS) , and the chemical states of compounds formed were examined. The results obtained show that in the surface layers of SiO2 the pure Si micro-regions are formed under the implantation and the interface thickness is almost doubled that leads to failure of MOS capacitors. The physical and chemical mechanisms of MOS structure change by Fe+ ion implantation are also discussed and analyzed. |
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| Keywords: | Photo-electron spectroscopy Si-SiO2 structure Iron ion irradiation |
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