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工艺条件对柔性衬底ITO薄膜光电性能的影响
引用本文:辛荣生,林钰,贾晓林.工艺条件对柔性衬底ITO薄膜光电性能的影响[J].电子元件与材料,2009,28(6).
作者姓名:辛荣生  林钰  贾晓林
作者单位:1. 郑州大学,材料科学与工程学院,河南,郑州,450052
2. 河南教育学院,化学系,河南,郑州,450014
摘    要:采用直流磁控溅射法在柔性衬底上镀制ITO透明导电薄膜,全面研究了薄膜厚度、氧气流量、溅射速率、溅射气压和镀膜温度等工艺条件对ITO薄膜光电性能的影响。结果表明,当膜厚大于80nm、氧氩体积比为1∶40、溅射速率为5nm/min、溅射气压在0.5Pa左右、镀膜温度为80~160℃时,ITO薄膜的光电性能较好,其电阻率小于5×10–4?·cm、可见光透光率大于80%。

关 键 词:DC磁控溅射  柔性衬底  ITO薄膜  电阻率  透光率

Effect of technological conditions on the electrical and optical properties of flexible ITO films
XIN Rongsheng,LIN Yu,JIA Xiaolin.Effect of technological conditions on the electrical and optical properties of flexible ITO films[J].Electronic Components & Materials,2009,28(6).
Authors:XIN Rongsheng  LIN Yu  JIA Xiaolin
Affiliation:1.College of Material Science and Engineering;Zhengzhou University;Zhengzhou 450052;China;2.Department of Chemistry;Henan Education Institute;Zhengzhou 450014;China
Abstract:ITO transparent conductive thin films were deposited on flexible substrates using DC magnetron sputtering method.The effects of technological conditions(such as the film thickness,the oxygen flux,the sputtering speed,the sputtering pressure and the temperature etc.) on the electrical and optical properties of ITO films were studied comprehensively.The results show that an optimum condition to prepare ITO films can be obtained,in which the film thickness is above 80 nm,the ratio of O2 to Ar is 1:40,the sputt...
Keywords:magnetron sputtering  flexible substrates  ITO thin film  resistivity  transmissivity  
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