Quantitative determination of the stability of SiC whisker in reaction-bonded/hot-pressed Si3N4 composites by X-ray diffraction |
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| Authors: | S. T. J. Chen J. -M. Yang |
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| Affiliation: | (1) Department of Materials Science and Engineering, University of California, 90024-1595 Los Angeles, CA, USA |
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| Abstract: | A method was developed for the quantitative determination of weight fractions of the phases in SiC whisker-reinforced reaction-bonded Si3N4 composites using X-ray diffraction. Composites with different amounts of sintering additives and whiskers were fabricated using reaction bonding followed by hot pressing. The amount of whiskers remaining in each composite after each processing stage was determined. In order to study the degradation mechanism, the microstructural development after each processing step was examined using scanning and transmission electron microscopy. Finally, the effect of sintering additives on the microstructural development and whisker stability was also investigated. |
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