| 低温NMOSFET的解析模型 |
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| 引用本文： | 刘卫东,魏同立.低温NMOSFET的解析模型[J].固体电子学研究与进展,1995,15(1):33-40. |
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| 作者姓名： | 刘卫东 魏同立 |
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| 作者单位： | 东南大学微电子中心 |
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| 摘 要： | 利用缓变沟道近似（ＧＣＡ）及准二维分析，提出了在７７～２９５Ｋ温区工作的ＮＭＯＳＦＥＴ的解析模型。建模中不仅考虑迁移率蜕变（电场引起）、载流子速度饱和及沟道调制效应，而且计入温度相关参数的温度特性。模拟结果显示了该模型的正确性及其在低温热载流子效应中的应用潜力。
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| 关 键 词： | 低温，MOSFET，模型 |
An Analytical Model for Low-temperature NMOSFET's |
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| Liu Weidong,Wei Tougli.An Analytical Model for Low-temperature NMOSFET''''s[J].Research & Progress of Solid State Electronics,1995,15(1):33-40. |
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| Authors: | Liu Weidong Wei Tougli |
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| Abstract: | An analytical model for the operation of NMOSFET's in the temperature range 77-295 K is proposed by incorporating gradual channel approximation(GCA) and pseudo-two-dimentional analysis. Second-order effects such as mobilitydegradation, carrier velocity saturation and channel-length modulation are taken into account. The dependence of parameters on temperature is included in the analysis. Simulation re$ults show the correctness of the proposed model and its potentialof application in the study. of low-temperation hot-carrier effects. |
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| Keywords: | Low Temperature MOSFET Model |
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