| Abstract: | A study is made of the failure of disks measuring Ø22 × 4 mm made of sublimated (SiCsub) and reaction-sintered (SiCr.s.) silicon carbide with heating of their surface by an electron beam with diameter 3, 4, and 7 mm. Depending on time (1·10–3–10 sec) and the level of loading (up to 10 kW/cm2) the different nature of specimen failure is established: from surface damage to separation into parts. Surface damage of SiCsub was characterized by local development of plastic deformation, cracks, and chips due to the effect of compressive stresses, but for SiCr.s.. it was characterized by erosion caused apparently by sublimation of free silicon.Translated from Problemy Prochnosti, No. 8, pp. 67–71, August, 1990. |
