Chemical Vapor Deposition of Copper Films from Copper Dipivaloylmethanate in Hydrogen Atmosphere |
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Authors: | V V Bakovets T M Levashova I P Dolgovesova V S Danilovich |
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Affiliation: | (1) Institute of Inorganic Chemistry, Siberian Division, Russian Academy of Sciences, pr. akademika Lavrent'eva 3, Novosibirsk, 630090, Russia |
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Abstract: | Data are presented on the kinetics and mechanism of copper deposition from Cu(dpm)2 vapor in a hydrogen atmosphere at normal pressure. From kinetic analysis of the deposition rate as a function of substrate temperature (200–390°C) and Cu(dpm)2 vapor pressure ( 7.8 Pa), the main parameters of kinetically limited deposition were determined: activation energy of 27 ± 7 kJ/mol, preexponential factor of (2.9 ± 1.8) × 102 cm/s, and reaction order of unity. Under diffusion-control conditions, the diffusion rate constant is 4.8 cm/s, and the thickness of the diffusion layer is 8 × 10–2 cm. The films grow by a mixed (island–layer) mechanism, and their electrical resistivity is close to that of bulk copper. |
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