| MOCVD于高温AlN模板上生长的AlGaN材料 |
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| 引用本文： | 闫建昌,王军喜,刘乃鑫,刘喆,阮军,李晋闽.MOCVD于高温AlN模板上生长的AlGaN材料[J].半导体学报,2009,30(10):103001-4. |
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| 作者姓名： | 闫建昌 王军喜 刘乃鑫 刘喆 阮军 李晋闽 |
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| 作者单位： | Semiconductor Lighting R&D Center;Institute of Semiconductors;Chinese Academy of Sciences; |
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| 基金项目： | 国家高技术研究发展计划（863计划）（批准号：2006AA03A111） |
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| 摘 要： | A high temperature AlN template was grown on sapphire substrate by metalorganic chemical vapor deposition.AFM results showed that the root mean square of the surface roughness was just 0.11 nm.Optical transmission spectrum and high resolution X-ray diffraction（XRD）characterization both proved the high quality of the AlN template.The XRD（002）rocking curve full width at half maximum（FWHM）was about 53.7 arcsec and（102）FWHM was about 625 arcsec.The densities of screw threading dislocations（TDs）and edge TDs wereestimated to be - 6 × 10^6 cm^-2 and - 4.7 ×10^9 cm^-2. AlGaN of Al composition 80.2% was further grown on the AlN template. The RMS of the surface roughness was about 0.51 nm. XRD reciprocal space mapping was carried out to accurately determine the Al composition and relaxation status in the AlGaN epilayer. The XRD （002） rocking curve FWHM of the AIGaN epilayer was about 140 arcsec and （102） FWHM was about 537 arcsec. The density of screw TDs was estimated to be - 4 × 10^7 cm^-2 and that of edge TDs was - 3.3 × 10^9 cm^-2. These values all prove the high quality of the AlN template and AlGaN epilayer.
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| 关 键 词： | 高温氮化 MOCVD生长 铝模板 品质 X射线衍射图 表面粗糙度 种植 摇摆曲线 |
| 收稿时间： | 5/4/2009 4:20:24 PM |
| 修稿时间： | 6/1/2009 2:33:45 PM |
High quality AlGaN grown on a high temperature AlN template by MOCVD |
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| Yan Jianchang,Wang Junxi,Liu Naixin,Liu Zhe,Ruan Jun and Li Jinmin.High quality AlGaN grown on a high temperature AlN template by MOCVD[J].Chinese Journal of Semiconductors,2009,30(10):103001-4. |
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| Authors: | Yan Jianchang Wang Junxi Liu Naixin Liu Zhe Ruan Jun and Li Jinmin |
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| Affiliation: | Semiconductor Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R & D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | A high temperature AlN template was grown on sapphire substrate by metalorganic chemical vapor deposition.AFM results showed that the root mean square of the surface roughness was just 0.11 nm.Optical transmission spectrum and high resolution X-ray diffraction(XRD)characterization both proved the high quality of the AlN template.The XRD(002)rocking curve full width at half maximum(FWHM)was about 53.7 arcsec and(102)FWHM was about 625 arcsec.The densities of screw threading dislocations(TDs)and edge TDs were... |
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| Keywords: | AlN template high temperature AlGaN MOCVD XRD |
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