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The formation of a SiOx interfacial layer on low-k SiOCH materials fabricated in ULSI application |
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| Authors: | C.H. Huang N.F. Wang Y.Z. Tsai C.C. Liu C.I. Hung M.P. Houng |
| Affiliation: | aInstitute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan, ROC bDepartment of Electronic Engineering, Cheng Shiu University, No. 840, Chengcing Road, Niaosong Township, Kaohsiung County 83305, Taiwan, ROC cDepartment of Electrical Engineering, Nan Jeon Institute of Technology, Taiwan, ROC dDepartment of Mechanical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan, ROC |
| Abstract: | The characterizations of SiOCH films using oxygen plasma treatment depends linearly on the O2/CO flow rate ratio. According to the results of Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) analyses, it was found that the carbon composition decreases with increasing O2/CO flow rate ratio, because more carbon in the Si–O–C and Si–CH3 bonds on the film surface would be converted by oxygen radicals. It was believed that the oxygen plasma could oxidize the SiOCH films and form a SiOx interfacial capping layer without much porosity. Moreover, the result of FTIR analysis revealed that there was no water absorbed on the film. A SiO2-like capping layer formed at the SiOCH film by the O2/CO flow rate ratio of 0.75 had nearly the same dielectric properties from the result of capacitance–voltage (C–V) measurement in our research. |
| Keywords: | Thin films Chemical vapor deposition (CVD) Fourier transform infrared spectroscopy (FTIR) X-ray photoelectron spectroscopy (XPS) |
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