| 氮气辅助氙离子束增强沉积TiN薄膜及其机械性能 |
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| 引用本文： | 王曦,杨根庆,柳襄怀,郑志宏,黄巍,周祖尧,邹世昌.氮气辅助氙离子束增强沉积TiN薄膜及其机械性能[J].金属学报,1992,28(3):87-91. |
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| 作者姓名： | 王曦 杨根庆 柳襄怀 郑志宏 黄巍 周祖尧 邹世昌 |
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| 作者单位： | 中国科学院上海冶金研究所离子束开放研究实验室
(王曦，杨根庆，柳襄怀，郑志宏，黄巍，周祖尧)，中国科学院上海冶金研究所离子束开放研究实验室(邹世昌) |
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| 摘 要： | 本文提出一个合成TiN硬质薄膜的新方法,在氮气氛中,电子束蒸发沉积Ti的同时,用40keV的氙离子束对其进行轰击而合成TiN薄膜,该方法优于PVD和CVD之处在于合成温度低,薄膜与基体结合力强,其临界载荷达4.2kg,Knoop硬度达2200kg/mm~2,具有良好的耐磨损性能,报道了所合成的TiN薄膜在工业上应用的一些结果。
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| 关 键 词： | TiN薄膜 离子束 增强沉积 耐磨性 |
| 收稿时间： | 1992-03-18 |
| 修稿时间： | 1992-03-18 |
PREPARATION OF TiN FILMS BY N_2 ASSISTED Xe~+ ION BEAM ENHANCED DEPOSITION AND THEIR MECHANICAL PROPERTIES |
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| WANG Xi,YANG Genqing,LIU Xianghuai,ZHENG Zhihong,HUANG Wei,ZHOU Zuyao,ZOU Shichang Ion Beam Laboratory.PREPARATION OF TiN FILMS BY N_2 ASSISTED Xe~+ ION BEAM ENHANCED DEPOSITION AND THEIR MECHANICAL PROPERTIES[J].Acta Metallurgica Sinica,1992,28(3):87-91. |
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| Authors: | WANG Xi YANG Genqing LIU Xianghuai ZHENG Zhihong HUANG Wei ZHOU Zuyao ZOU Shichang Ion Beam Laboratory |
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| Affiliation: | WANG Xi,YANG Genqing,LIU Xianghuai,ZHENG Zhihong,HUANG Wei,ZHOU Zuyao,ZOU Shichang Ion Beam Laboratory,Shanghai Institute of Metallurgy,Academia Sinica |
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| Abstract: | A new method for preparation of hard TiN films has been developed by electron
beam evaporation--deposition of Ti and bombardment with tens keV Xe~+ ion beam in a N_2 gas
environment. The TiN film, prepared by Xe~+ ion beam enhanced deposition, is superior to PVD
and CVD ones in respects of improved adhension to substrate and low preparing temperature.
It exhibited good wear resistance and high Knoop hardness up to 2200 kg / mm~2. Some indus-
trial applications have been reported. |
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| Keywords: | TiN film ion beam enhanced deposition property |
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