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| 用于双极电路ESD保护的SCR结构设计失效分析 | |
| 引用本文： | 冯筱佳,刘玉奎,朱坤峰. 用于双极电路ESD保护的SCR结构设计失效分析[J]. 微电子学, 2010, 40(1) |
| 作者姓名： | 冯筱佳 刘玉奎 朱坤峰 |
| 作者单位： | 1. 重庆邮电大学,光电工程学院,重庆,400065;模拟集成电路国家级重点实验室,重庆,400060 2. 模拟集成电路国家级重点实验室,重庆,400060;中国电子科技集团公司,第二十四研究所,重庆,400060 3. 模拟集成电路国家级重点实验室,重庆,400060;重庆大学,光电工程学院,重庆,400044 |
| 摘 要： | 针对目前双极电路的ESD保护需求,引入SCR结构对芯片进行双极电路ESD保护。通过一次流片测试,发现加入SCR结构的电路芯片失效,SCR结构的I-V特性曲线未达到要求。从设计问题和工艺偏差两方面入手,分析了失效原因,通过模拟仿真,验证了失效是因为在版图设计时为节省版图面积,将结构P阱中NEMIT扩散区域边上用来箝位的电极开孔去掉造成的,并非工艺偏差导致的。通过二次流片测试,验证了失效原因分析的正确性,SCR器件结构抗ESD电压大于6kV,很好地满足了设计要求。 |
| 关 键 词： | 双极电路 静电保护 可控硅整流器 失效分析 |
Failure Analysis of SCR Structure for ESD Protection of Bipolar IC's |
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| FENG Xiaojia,LIU Yukui,ZHU Kunfeng. Failure Analysis of SCR Structure for ESD Protection of Bipolar IC's[J]. Microelectronics, 2010, 40(1) | |
| Authors: | FENG Xiaojia LIU Yukui ZHU Kunfeng |
| Affiliation: | 1.College of Opto-Electronic Engineering/a>;Chongqing University of Posts and Telecommunications/a>;Chongqing 400065/a>;P.R.China/a>;2.National Lab of Analog IC's/a>;Chongqing 400060/a>;3.Sichuan Institute of Solid-State Circuits/a>;CETC/a>;4.College of Opto-Electronic Engineering/a>;Chongqing University/a>;Chongqing 400044/a>;P.R.China |
| Abstract: | SCR structure was used for ESD protection in bipolar IC.However,the first chip with SCR structure failed,which might be caused by layout design or process variation.Through simulation and analysis,it was found that the failure was due to the removal of clamping electrode opening at the edge of NEMIT diffusion zone in p-well,which was intended to reduce layout area.To validate the analysis,a second chip was fabricated and tested.Results showed that the SCR structure could achieve an ESD protection voltage ab... |
| Keywords: | Bipolar IC ESD protection Silicon controlled rectifier Failure analysis |
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