High-speed Al0.2Ga0.8As/GaAsmulti-quantum-well phototransistors with tunable spectral response |
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| Authors: | Li W.Q. Karakucuk M. Freeman P.N. East J.R. Haddad G.I. Bhattacharya P.K. |
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| Affiliation: | Dept. of Electr. Eng., Michigan Univ., Ann Arbor, MI; |
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| Abstract: | The authors have measured the high-frequency characteristics and temporal response of a GaAs/AlGaAs heterojunction phototransistor with a GaAs/Al0.2Ga0.8 multi-quantum-well collector. The quantum wells offer tunability of the photoresponse (10 nm for a bias change of 4 V) and a negative differential resistance in the photocurrent-voltage characteristics. Measured values of fT and fmax are 20 and 6 GHz, respectively. The temporal response to short-pulse optical excitation is characterized by a linewidth of 46 ps. Such devices are attractive candidates for making optically induced oscillators |
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