氢气与Cu中间层对GZO薄膜光电性能的影响

采用磁控溅射方法, 在H₂/Ar混合气氛下制备了GZO薄膜和在Ar气氛下制备了GZO/Cu/GZO多层结构薄膜, 分别研究了H2流量和Cu层厚度对薄膜透明导电性能的影响。在此基础上, 在H₂/Ar混合气氛下制备了GZO/Cu/GZO多层结构薄膜, 对Cu层厚度对其性能的影响进行了研究。结果表明, 沉积气氛中引入H₂能有效降低GZO薄膜的电阻率而提高其透光率, 在H₂流量为20 sccm时GZO薄膜具有最佳性能。随着Cu厚度的增加, GZO/Cu/GZO多层结构薄膜的电阻率和平均透过率显著下降。在H₂/Ar混合气氛下制备的氢化GZO/Cu/GZO多层结构薄膜的电阻率普遍低于Ar气氛下制备的GZO/Cu/GZO多层结构薄膜, 但其透光率却随Cu层厚度的增加而显著降低。另外, 薄膜的禁带宽度随H₂流量的增加而增加, 随Cu层厚度的增加而减小。

Effect of Hydrogen and Cu Interlayer on the Optical and Electrical Properties of GZO Thin Film

By method of magnetron sputtering, GZO thin films were deposited in H₂+Ar atmosphere and GZO/Cu/GZO thin films were deposited in Ar atmosphere. Effects of H₂ flux and Cu interlayer thickness on the optical and electrical properties of the films were investigated, respectively. Furthermore, GZO/Cu/GZO films were also deposited in H₂+Ar and the properties of films were investigated as a function of Cu interlayer thickness. The results show that introduction of H₂ into deposition atmosphere can effectively decrease the resistivity and enhance the transmittance of GZO films. The best figure of merit is obtained for the films deposited at H₂ flux of 20 sccm. With increasing Cu interlayer thickness, both the resistivity and transmittance of the GZO/Cu/GZO multilayer film are decreased. After introducing H₂ into deposition atmosphere, the transmittance of GZO/Cu/GZO multilayer film is remarkably decreased although its resistivity is further decreased with increasing Cu interlayer thickness. In addition, it is found that the energy gap (E_g) of the films increases with H2 flux increasing, while it decreases with Cu interlayer thickness increasing.