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氢气与Cu中间层对GZO薄膜光电性能的影响
引用本文:吕坤,祝柏林,李珂,胡文超,谢铭,吴隽.氢气与Cu中间层对GZO薄膜光电性能的影响[J].无机材料学报,2014,29(5):493-497.
作者姓名:吕坤  祝柏林  李珂  胡文超  谢铭  吴隽
作者单位:(武汉科技大学 钢铁冶金及资源利用省部共建教育部重点实验室, 武汉 430081)
基金项目:高性能陶瓷和超微结构国家重点实验室开放课题(SKL201110SIC)~~
摘    要:采用磁控溅射方法, 在H2/Ar混合气氛下制备了GZO薄膜和在Ar气氛下制备了GZO/Cu/GZO多层结构薄膜, 分别研究了H2流量和Cu层厚度对薄膜透明导电性能的影响。在此基础上, 在H2/Ar混合气氛下制备了GZO/Cu/GZO多层结构薄膜, 对Cu层厚度对其性能的影响进行了研究。结果表明, 沉积气氛中引入H2能有效降低GZO薄膜的电阻率而提高其透光率, 在H2流量为20 sccm时GZO薄膜具有最佳性能。随着Cu厚度的增加, GZO/Cu/GZO多层结构薄膜的电阻率和平均透过率显著下降。在H2/Ar混合气氛下制备的氢化GZO/Cu/GZO多层结构薄膜的电阻率普遍低于Ar气氛下制备的GZO/Cu/GZO多层结构薄膜, 但其透光率却随Cu层厚度的增加而显著降低。另外, 薄膜的禁带宽度随H2流量的增加而增加, 随Cu层厚度的增加而减小。

关 键 词:GZO薄膜  多层膜结构  氢掺杂  透明导电薄膜  光电性能  
收稿时间:2013-08-07
修稿时间:2013-09-22

Effect of Hydrogen and Cu Interlayer on the Optical and Electrical Properties of GZO Thin Film
LV Kun,ZHU Bai-Lin,LI Ke,HU Wen-Chao,XIE Ming,WU Jun.Effect of Hydrogen and Cu Interlayer on the Optical and Electrical Properties of GZO Thin Film[J].Journal of Inorganic Materials,2014,29(5):493-497.
Authors:LV Kun  ZHU Bai-Lin  LI Ke  HU Wen-Chao  XIE Ming  WU Jun
Affiliation:(Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081, China)
Abstract:By method of magnetron sputtering, GZO thin films were deposited in H2+Ar atmosphere and GZO/Cu/GZO thin films were deposited in Ar atmosphere. Effects of H2 flux and Cu interlayer thickness on the optical and electrical properties of the films were investigated, respectively. Furthermore, GZO/Cu/GZO films were also deposited in H2+Ar and the properties of films were investigated as a function of Cu interlayer thickness. The results show that introduction of H2 into deposition atmosphere can effectively decrease the resistivity and enhance the transmittance of GZO films. The best figure of merit is obtained for the films deposited at H2 flux of 20 sccm. With increasing Cu interlayer thickness, both the resistivity and transmittance of the GZO/Cu/GZO multilayer film are decreased. After introducing H2 into deposition atmosphere, the transmittance of GZO/Cu/GZO multilayer film is remarkably decreased although its resistivity is further decreased with increasing Cu interlayer thickness. In addition, it is found that the energy gap (Eg) of the films increases with H2 flux increasing, while it decreases with Cu interlayer thickness increasing.
Keywords:GZO thin film  multilayer film  hydrogen doping  transparent conductive film  optical and electrical property  
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