| 瞬时蒸发法制备Bi薄膜的微观结构及电输运性能 |
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| 引用本文： | 段兴凯,江跃珍. 瞬时蒸发法制备Bi薄膜的微观结构及电输运性能[J]. 材料科学与工程学报, 2009, 0(3) |
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| 作者姓名： | 段兴凯 江跃珍 |
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| 作者单位： | 九江学院机械与材料工程学院; |
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| 基金项目： | 江西省教育厅科技资助项目(GJJ09343) |
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| 摘 要： | 用瞬时蒸发法在加热到453K的玻璃基体上沉积出了厚度在40-160nm的多晶Bi纳米薄膜。用X射线衍射(XRD)、场发射扫描电子显微术(FE-SEM)分析了薄膜的相结构和表面形貌。在300-350K研究了薄膜厚度与电阻率的关系,随着薄膜厚度增加,电阻率并不是单调减小;随着温度增加,电阻率减小。温度在300K时,Bi薄膜的电阻率在0.36-0.46mΩ·cm之间变化。随着薄膜厚度的增加,Seebeck系数增加。电子浓度、迁移率与薄膜厚度的关系表明薄膜的电输运性能随薄膜厚度的变化而波动。
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| 关 键 词： | 铋薄膜 电输运性能 瞬时蒸发 |
Microstructure and Electrical Transport Properties of Bismuth thin Films Prepared by Flash Evaporation |
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| DUAN Xing-kai,JIANG Yue-zhen. Microstructure and Electrical Transport Properties of Bismuth thin Films Prepared by Flash Evaporation[J]. Journal of Materials Science and Engineering, 2009, 0(3) |
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| Authors: | DUAN Xing-kai JIANG Yue-zhen |
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| Affiliation: | School of Mechanical and Material Engineering;Jiujiang University;Jiujiang 332005;China |
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| Abstract: | Polycrystalline Bi thin films with thickness in the range of 40~160 nm were successfully deposited on glass substrates at 453K by flash evaporation method. XRD and FE-SEM were performed to characterize their structure and surface morphology respectively. The preferred orientation (012) is present in all the thin films. FESEM image shows that the deposited Bi thin films are very compact. It is observed that the grains are well crystallized and homogeneously distributed. Electrical resistivity was carried out... |
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| Keywords: | bismuth thin film electrical transport properties flash evaporation |
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