| 6H-SiC埋沟MOSFET的C-V解析模型研究 |
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| 引用本文： | 王巍,王玉青,申君君,唐政维,秘俊杰.6H-SiC埋沟MOSFET的C-V解析模型研究[J].微电子学,2009,39(1). |
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| 作者姓名： | 王巍 王玉青 申君君 唐政维 秘俊杰 |
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| 作者单位： | 重庆邮电大学光电工程学院,重庆,400065 |
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| 基金项目： | 重庆市科委自然科学基金 |
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| 摘 要： | 研究了6H-SiC埋沟MOSFET器件的电容-电压特性,建立了解析模型.具体分析了埋沟MOSFET各种工作模式下的电容与栅电压之间的关系,考虑了SiO2/SiC界面态及pn结对电容-电压特性的影响.对模型进行了仿真分析验证,结果表明:在假设界面态密度分布均匀条件下,由于对界面态做了简化处理,因而在耗尽模式及夹断模式下的C-V特性计算结果与实验结果有所差异.
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| 关 键 词： | 碳化硅 埋沟MOSFET C-V特性 界面态 |
Study on Analytic Model of C-V Relationship of 6H-SiC Buried-Channel MOSFET |
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| WANG Wei,WANG Yuqing,SHEN Junjun,TANG Zhengwei,MI Junjie.Study on Analytic Model of C-V Relationship of 6H-SiC Buried-Channel MOSFET[J].Microelectronics,2009,39(1). |
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| Authors: | WANG Wei WANG Yuqing SHEN Junjun TANG Zhengwei MI Junjie |
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| Affiliation: | College of Electronics Engineering;Chongqing University of Posts and Telecommunications;Chongqing 400065;P.R.China |
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| Abstract: | C-V characteristics of 6H-SiC buried-channel MOSFET analytical model were investigated.C-V relationship in accumulation,inversion,depletion and pinch-off modes was discussed,and C-V characteristics in depletion mode and pinch-off mode were investigated in particular.Effects of the interface states in SiO2/SiC interface and p-n junction on C-V characteristics were taken into consideration in the model.Simulation results showed that the numerical results fit well with experimental data,and the discrepancy bet... |
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| Keywords: | Silicon carbide Buried channel MOSFET C-V characteristics Interface state |
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