Improvement of characteristics of new-type solar cells, having a “transparent conductor/thin Si02 layer with ultrafine metal particles as conductive channels/n-Si” junction

New-type solar cells, having a structure “transparent conductor/thin Si0₂ layer with ultrafine metal islands as conductive channels/n-Si” have been prepared by forming a very thin (< 1.0 nm) silicon oxide (Si0₂) layer as well as platinum (Pt) islands (5–50 nm in size) embedded in it on a single crystal n-type silicon (n-Si) wafer, followed by the deposition of an indium tin oxide (ITO) film (200 nm thick) by the electron-beam evaporation method. The open-circuit photovoltages (V_oc) of the solar cells of the above structure were relatively low, 0.25–0.47 V, but they increased very much to 0.50–0.59 V if a thin (3–10 nm) layer of an organic compound such as copper phthalocyanine (CuPc) was pre-deposited on the Pt-island modified n-Si wafer before the ITO deposition. The reason for the beneficial effect of the pre-deposition of the thin CuPc layer was investigated in detail, and it has been found that certain crystal defects are formed in n-Si near the n-Si/Si0₂ interface during the ITO deposition in the absence of the CuPc layer. The formation of such defects is prevented in the presence of the CuPc layer, which leads to a decrease in surface carrier recombination and hence to the increase in V_oc.