Hole trapping in E-beam irradiated SiO2 films |
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Authors: | J M Aitken R F Dekeersmaecker |
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Affiliation: | (1) IBM, 12533 Hopewell Junction, N.Y.;(2) Interuniversity Microelectronics Center (IMEC)-(VZW), 75, 3030 Kapeldreef, Leuven, Belgium |
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Abstract: | Low energy (25 kV) electron beam irradiation of MOS capacitors is shown to produce neutral hole traps in thin ‘radiation hardened’
SiO2 films. These traps are found in an uncharged state after irradiation and are populated by passing a small hole current, generated
by avalanche breakdown of then-type silicon substrate, through the oxide. From the time dependence of the observed trapping, a capture cross-section between
1 × 10∼−13 and 1 × 10−14 cm2 is deduced. The trap density is found to depend on the annealing conditions and incident electron beam dosage. The density
of traps increases with incident electron beam exposure. Once introduced into the oxide by the radiation the traps can be
removed by thermal anneals at temperatures above 500° C. Parallels between electron and hole trapping on these neutral centers
are strong evidence for an amphoteric uncharged trap generated by ionizing radiation. |
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Keywords: | Electron beam irradiation SiO2 hole trapping annealing of traps |
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