Field dependence of mobility in Al0.2Ga0.8As/GaAs heterojunctions at very low fields |
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| Authors: | Drummond T.J. Keever M. Kopp W. Morko? H. Hess K. Streetman B.G. Cho A.Y. |
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| Affiliation: | University of Illinois, Department of Electrical Engineering, Coordinated Science Laboratory, Urbana, USA; |
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| Abstract: | Multiple-period (Al, Ga)As/GaAs modulation doped heterojunction structures have been grown with molecular beam epitaxy. Electron mobilities of about 200 000 cm2/Vs at 10 K and 90000 cm2/Vs at 77 K with associated sheet carrier concentrations of about 2×1012 cm?2 have been observed. The current parallel to the interfaces for low electric fields was examined as a function of lattice temperature. The electron mobility has been observed to be strongly dependent on the strength of the electric field, and hot electron effects were observable at a field as low as 10 V/cm. To our knowledge this is the first report of hot electron phenomena in GaAs at such small fields. |
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