控制超大规模集成电路用水中的溶解氧和总有机碳浓度的研究

本文介绍了溶解氧(DO)以及总有机碳(TOC)对超大规模集成电路(ULSI)用水的污染,并列出了高纯水中TOC的浓度与栅氧化缺陷密度的关系数据.研究了影响水中DO的因素以及用各种方法降低TOC的比较,本文设计了用脱氧膜接触器,降低高纯水中的溶解氧.结合用双级反渗透(RO)及电脱盐(EDI) 再加上185nm紫外光照射高纯水,使高纯水中的溶解氧和TOC分别降至0.6μg/L和0.7μg/L,并用键能理论解释了185nm紫外降低TOC的机理.

Study on Controlling the Concentrations of Dissolved Oxygen and Total Organic Carbon in Water Used for ULSI

In this paper the contamination of water for ULSI by dissolved oxygen(DO) and total organic carbon (TOC) and the dependence of the density of defects in the gate oxide on the concentration of TOC in high purity water are described.The factors influencing the DO incorporation in water are studied and the different methods for abating TOC are compared.A membrane contactor used to remove DO has been designed.Concentration of DO and TOC in high-purity water treated by deoxy-membrane contactor in conjunction with the double reverse osmosis (RO),electrodeionization desalting and radiation by 185nm UV can reach 0.6μg/L and 0.7μg/L,respectively,The mechanism of decreasing TOC by 185nmUV jrradiation has been explained by using bond energy theory.