Conversion of red and infrared luminescence centers as a result of electron bombardment and annealing of CdS and CdS:Cu single crystals

The luminescence centers and their conversion as a result of electron bombardment and annealing in CdS single crystals which were not specially doped and which were doped with copper have been investigated. The Cu atoms, which interact mainly with defects in the cadmium sublattice, form Cu_Cd, which are responsible for luminescence at wavelengths λ_m=0.98?1.00 µm. At annealing temperatures above 50 °C, conversion of the defect complexes, which are responsible for the green (λ_m=0.514 µm), red (λ_m=0.72 µm), and infrared (λ_m=0.98 µm) luminescence, occurs as a result of an increase in the mobility of point defects in the cadmium and sulfur sublattices of CdS:Cu.