The Island-Gate Varactor—A High-Q MOS Varactor for Millimeter-Wave Applications |
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| Authors: | Yongho Oh Sooyeon Kim Seungyong Lee Jae-Sung Rieh |
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| Affiliation: | Sch. of Electr. Eng., Korea Univ., Seoul; |
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| Abstract: | A new accumulation MOS varactor with island-shaped poly gate layout is proposed to improve the quality factor ( Q-factor) at high frequency, which can be readily employed for CMOS-based millimeter-wave applications. Measured results up to 67 GHz show significant improvements in the Q-factor and the series resistance Rs over the conventional multi-finger MOS varactors with the same ground rule and gate area. The proposed island-gate MOS varactor is expected to improve the overall Q-factor of the LC tank of millimeter-wave oscillators. |
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