Electron tunneling through ultrathin boron nitride crystalline barriers |
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Authors: | Britnell Liam Gorbachev Roman V Jalil Rashid Belle Branson D Schedin Fred Katsnelson Mikhail I Eaves Laurence Morozov Sergey V Mayorov Alexander S Peres Nuno M R Neto Antonio H Castro Leist Jon Geim Andre K Ponomarenko Leonid A Novoselov Kostya S |
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Affiliation: | School of Physics & Astronomy, University of Manchester, Manchester M13 9PL, United Kingdom. |
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Abstract: | We investigate the electronic properties of ultrathin hexagonal boron nitride (h-BN) crystalline layers with different conducting materials (graphite, graphene, and gold) on either side of the barrier layer. The tunnel current depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field. It offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel. |
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