Charge-transfer theory in polycrystalline semiconductors with deep impurity centers

This paper discusses the static and dynamic properties of charge transfer through electrically active grain boundaries in polycrystalline semiconductors with deep impurity centers in the bulk of the grains. The admittance of the grain boundary is computed as a function of frequency and applied dc bias U _b. When U _b≠0, the admittance is mainly controlled by charge-exchange processes of the intergrain boundary states and to an insignificant extent by the charge exchange of deep traps in the bulk of the semiconductor. The application of this theory to the spectroscopy of intergrain boundary states is considered. Fiz. Tekh. Poluprovodn. 32, 690–696 (June 1998)