| 探测器级高阻硅及其与器件的关系 |
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| 引用本文： | 郭云英. 探测器级高阻硅及其与器件的关系[J]. 核电子学与探测技术, 1994, 14(6): 321-327 |
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| 作者姓名： | 郭云英 |
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| 作者单位： | 北京有色金属研究总院 |
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| 摘 要： | 本文就探测器级硅单晶的制备工艺和参数等进行了有益的探讨，发现高真空深度提纯之区熔硅单晶中的细微缺陷，乃是影响探测器制作和性能的关键参数。
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| 关 键 词： | 探测器级 硅单晶 细微缺陷 探测器 制作 匹配 |
Single Crystal Silicon Used in Detectors and Its Relation to Devices |
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| Guo Yunying. Single Crystal Silicon Used in Detectors and Its Relation to Devices[J]. Nuclear Electronics & Detection Technology, 1994, 14(6): 321-327 |
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| Authors: | Guo Yunying |
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| Abstract: | This article gives a benificial discussion on manufacturing technlolgy of single crystal sili-con which is used in detectors,and discovered that the tiny microdefects in single crystal siliconis the key factor which affected manufactured detectors and its function.( |
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| Keywords: | Single crystal silicon used in detectors Tiny microdefects) |
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