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Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal-oxide-semiconductor capacitors
Authors:Liu Chen  Zhang Yuming  Zhang Yimen  L&#; Hongliang and Lu Bin
Affiliation:School of Microelectronics and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China
Abstract:
Keywords:GaAs metal-oxide-semiconductor capacitor  temperature  interface  leakage current
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