| 应用于S频段的宽带高谐波抑制的F类功率放大器的设计 |
| |
| 引用本文： | 林俊明,章国豪,郑耀华,李思臻,张志浩,陈思弟.应用于S频段的宽带高谐波抑制的F类功率放大器的设计[J].半导体学报,2015,36(12):125002-5. |
| |
| 作者姓名： | 林俊明 章国豪 郑耀华 李思臻 张志浩 陈思弟 |
| |
| 基金项目： | 国家自然科学基金 (61404032) |
| |
| 摘 要： | 采用InGaP/GaAs HBT工艺设计了一个适用于S频段的宽带F类功率放大器，管芯大小为3×3×0.82mm3。为了同时实现高谐波抑制和宽带，在宽带匹配电路中使用了谐波陷波器。在1.8~2.5 GHz范围内，该匹配网络的输入阻抗约为一个常电阻，二次谐波阻抗约为零而三次谐波阻抗接近无穷大，因此提高了功率放大器的效率。输入测试信号为连续波，测试结果表明该功率放大器在1dB压缩点下的输出功率约为34dBm，PAE约为57%，2到4次谐波分量功率均小于-53dBc。
|
| 关 键 词： | S-band power amplifier broadband class-F harmonic suppression InGaP/GaAs HBT |
| 收稿时间： | 2015/3/26 0:00:00 |
| 修稿时间： | 5/9/2015 12:00:00 AM |
Design of broadband class-F power amplifier with high-order harmonic suppression for S-band application |
| |
| Lin Junming,Zhang Guohao,Zheng Yaohu,Li Sizhen,Zhang Zhihao and Chen Sidi.Design of broadband class-F power amplifier with high-order harmonic suppression for S-band application[J].Chinese Journal of Semiconductors,2015,36(12):125002-5. |
| |
| Authors: | Lin Junming Zhang Guohao Zheng Yaohu Li Sizhen Zhang Zhihao and Chen Sidi |
| |
| Affiliation: | Guangdong University of Technology,Guangzhou 510006,China |
| |
| Abstract: | A broadband class-F power amplifier for an S-band handset device is integrated on a 3×3×0.82 mm3 die using an InGaP/GaAs HBT process. With LC serial harmonic traps immersed into the broadband output matching circuit, good harmonic suppression performance can be achieved. A pure resistive impedance of the matching circuit, but near zero at second and infinite at third harmonic frequency, which enhances the efficiency, is obtained across 1.8-2.5 GHz. Tested with a continuous wave(CW) signal, the PA delivers an output power of 34 dBm and achieves a PAE of 57% at 2 GHz. In addition, excellent harmonic suppression levels of less than-53 dBc across the second to fifth harmonic are obtained. |
| |
| Keywords: | S-band power amplifier broadband class-F harmonic suppression InGaP/GaAs HBT |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
