| 质子辐射环境下NPN输入运算放大器在不同偏置状态下的辐射效应 |
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| 引用本文： | 姜柯,陆妩,郭旗,何承发,王信,刘默寒,李小龙.质子辐射环境下NPN输入运算放大器在不同偏置状态下的辐射效应[J].半导体学报,2015,36(12):125001-5. |
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| 作者姓名： | 姜柯 陆妩 郭旗 何承发 王信 刘默寒 李小龙 |
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| 摘 要： | 对NPN输入运算放大器LM741在不同偏置状态下进行了Co-60 γ射线辐照和3MeV与10MeV质子射线辐照以研究NPN输入运算放大器的质子辐照效应。通过比较Co-60 γ射线辐照和3MeV与10MeV质子射线辐照的实验结果可以发现，3MeV与10MeV质子射线辐照在LM741中主要产生电离损伤。在不同的偏置状态下，器件的损伤敏感程度不同，零偏置器件的输入偏置电流的退化明显高于正向偏置器件。对于相同吸收剂量的质子，质子通量的差别对器件的辐射效应影响很小。电源电流是另一个对质子辐照敏感的参数，Co-60 γ射线辐照和3MeV与10MeV质子射线辐照会对电源电流产生不同程度的影响，这是因为Co-60 γ射线辐照和3MeV与10MeV质子射线辐照引起的电离能量沉积和位移能量沉积不同
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| 关 键 词： | NPN input bipolar operational amplifier proton radiation different biases radiation effect |
| 收稿时间： | 3/7/2015 12:00:00 AM |
| 修稿时间： | 6/5/2015 12:00:00 AM |
Proton radiation effect of NPN-input operational amplifier under different bias conditions |
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| Jiang Ke,Lu Wu,Guo Qi,He Chengf,Wang Xin,Liu Muohan and Li Xiaolong.Proton radiation effect of NPN-input operational amplifier under different bias conditions[J].Chinese Journal of Semiconductors,2015,36(12):125001-5. |
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| Authors: | Jiang Ke Lu Wu Guo Qi He Chengf Wang Xin Liu Muohan and Li Xiaolong |
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| Affiliation: | 1. Key Laboratory of Functional Materials and Devices for Special Environments,Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Urumqi 830011,China;Xinjiang Key Laboratory of Electronic Information Material and Device,Urumqi 830011,China;University of Chinese Academy of Sciences,Beijing 100049,China;2. Key Laboratory of Functional Materials and Devices for Special Environments,Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Urumqi 830011,China;Xinjiang Key Laboratory of Electronic Information Material and Device,Urumqi 830011,China |
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| Abstract: | |
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| Keywords: | NPN input bipolar operational amplifier proton radiation different biases radiation effect |
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