Furnace grown gate oxynitride using nitric oxide (NO) |
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| Authors: | Okada Y Tobin PJ Reid KG Hegde RI Maiti B Ajuria SA |
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| Affiliation: | Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX; |
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| Abstract: | Gate oxynitride was grown in NO for the first time. This approach can provide a tight N accumulation near the Si/SiO2 interface. Much lower thermal budget is required for an NO process than for an N2O process to produce an oxynitride with useful properties. Submicron MOSFET's with NO oxynitride showed superior current drive characteristics and comparable hot carrier immunity to those with N2O oxynitride |
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