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Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy |
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| Authors: | ZHU Yan NI Hai-qiao WANG Hai-li HE Ji-fang LI Mi-feng SHANG Xiang-jun NIU Zhi-chuan |
| Affiliation: | ZHU Yan,NI Hai-qiao,WANG Hai-li,HE Ji-fang,LI Mi-feng,SHANG Xiang-jun,and NIU Zhi-chuan State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
| Abstract: | The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy (MBE) are investigated. The controlling of the source temperature is improved to realize the linearly graded InGaAs metamorphic structure precisely. The threading dislocations are reduced. We also optimize the growth and annealing parameters of the InGaAs quantum well (QW). The 1.3-μm GaAs based metamorphic InGaAs QW is completed. A 1.3-μm GaAs based metamorphic laser is reported. |
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